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| Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS s Features q Avalanche q Low q No Unit : mm 8.50.2 3.40.3 1.00.1 energy capability guaranteed 6.00.5 ON-resistance 10.00.3 secondary breakdown drive 1.50.1 q Low-voltage s Applications 10.5min. 1.5max. 2.0 1.1max. q Non-contact q Solenoid q Motor relay drive 0.80.1 0.5max. drive equipment mode regulator 2.540.3 5.080.5 1 2 3 q Control q Switching s Absolute Maximum Ratings (Tc = 25C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25C Ta= 25C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 8010 15 10 20 62.5 30 1.3 150 -55 to +150 Unit V V A A mJ W C C S G 1 : Gate 2 : Collector 3 : Emitter N Type Package s Equivalent Circuit D Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature * L= 5mH, IL= 5A, 1 pulse s Electrical Characteristics (Tc = 25C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Reverse recovery time Reverse recovery charge Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF trr Qrr Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) VDD= 30V, ID= 5A VGS=10V, R L= 6 VDS=10V, VGS= 0, f= 1MHz Condition VDS= 70V, VGS= 0 VDS= 0, VGS=15V ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, I D= 5A VGS= 4V, ID= 5A VDS=10V, ID= 5A IDR=10A, VGS= 0 L=230 H, VDD= 30V, VGS = 0 IDR=10A, di/dt= 80A/ s 0.55 2.2 85 250 20 0.5 0.9 1.9 4.2 96 3 70 1 150 230 5.5 -1.8 Min Typ Max 10 10 90 2.5 230 370 Unit A A V V m m S V s s pF pF pF s s s C/W C/W Power F-MOS FETs 2SK2339 Area of safe operation (ASO) 100 Non repetitive pulse TC=25C 60 PD - Ta (1) TC=Ta (2) Without heat sink (PD=1.3W) (A) IAS - L-load 100 TC=25C 50 30 20 10 62.5mJ 5 3 2 1 0.5 0.3 0.2 30 IDP t=100ms t=1ms Drain current ID (A) 3 t=10ms t=100ms 30 (1) DC 1 20 0.3 10 (2) 0.1 1 3 5 10 30 50 100 Drain-Source voltage VDS (V) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Abalanche current IAS 10 ID Allowable power dissipation PD (W) 50 40 0.1 0.1 0.3 0.5 L-load 1 L (mH) 3 5 10 ID -VDS 14 VGS=10V 5V 4.5V ID (A) ID - VGS 18 Vth - TC 6 TC=25C Ta=25C 16 VDS=10V ID=1mA 5 Gate threshold voltage Vth (V) 12 14 ID (A) 10 12 10 8 6 4 4 8 4V 6 3.5V PD=30W 2 3V Drain current Drain current 3 2 4 1 2 0 0 0 2 4 6 8 VDS 10 (V) 12 Drain-Source voltage 0 0 2 4 6 8 10 0 25 50 75 100 125 150 Gate-Source voltage VGS (V) Case temperature TC (C) RDS(on) - ID 600 (m) RDS(on) - VGS 600 TC=25C (S) | Yfs | - ID 7 VDS=10V Ta=25C 6 Drain-Source ON-resistance RDS(on) () 500 (1)VGS=4V (2)VGS=10V TC=25C 500 ID=2.5A 400 ID=5A RDS (on) | Yfs | Forward transadmittance 5 400 300 (1) 200 (2) 100 Drain-Source ON-resistance 4 300 3 200 2 100 1 0 0 2 4 6 8 10 12 Drain current ID (A) 0 0 2 4 6 VGS 8 (V) 10 Gate-Source voltage 0 0 2 4 6 8 10 12 Drain current ID (A) Power F-MOS FETs 2SK2339 Ciss, Coss, Crss - VDS Input capacitance, Output capacitance, Ciss, Coss, Crss (pF) Feedback capacitance 2000 1000 500 Switching time t (ms) td(off), tr, ton - ID 3.0 VDD=30V VGS=10V TC=25C Drain-Source voltage VDS (V) VDS, VGS - Qg 14 ID=10A Ta=20C 60 VDS VDS=30V VDS=40V VDS=50V VGS 12 Gate-Source voltage VGS (V) f=1MHz TC=25C 2.5 50 10 200 100 50 Coss Ciss 2.0 td(off) 1.5 40 8 30 6 1.0 tf 20 Crss 10 5 0 20 40 60 80 100 0.5 ton 20 4 10 2 0 0 2 4 6 8 ID (A) 10 12 Drain-Source voltage VDS (V) Drain current 0 0 5 10 15 20 25 Gate charge amount Qg (nc) 0 ISD - VSD 20 10 Rth - tP 1000 VGS=0 TC=25C Thermal resistance Rth (C/W) Souce-Drain current ISD (A) 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0 0.5 1.0 1.5 2.0 Diode forward voltage VSD (V) Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 50 x 50 x 2mm Al heat sink 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Pulse width tP (s) |
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